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  • ...tion of carbamazepine and its derivatives is relatively well understood. [[Voltage-gated sodium channel]]s are the molecular pores that allow brain cells ([[n ...e|microsomal epoxide hydrolase]] (mEH), the [[enzyme]] responsible for the breakdown of carbamazepine-10,11 epoxide into inactive metabolites.<ref>{{cite book |
    16 KB (2,164 words) - 16:42, 27 September 2010
  • Valproic acid also blocks the [[voltage-gated sodium channel]]s and T-type calcium channels. These mechanisms make ...e|microsomal epoxide hydrolase]] (mEH), the [[enzyme]] responsible for the breakdown of carbamazepine-10,11 epoxide (the main active metabolite of carbamazepine
    25 KB (3,328 words) - 16:47, 27 September 2010
  • ...that they can dissipate a lot of energy, and they self reset — after the voltage across the device drops below the threshold, its resistance returns to bein ...or|surge-protection]] applications. As there is control over the threshold voltage and energy tolerance, they find use in all sorts of applications. The best
    28 KB (3,876 words) - 10:08, 20 September 2010
  • ...ied and the EAP fingers deform in order to surround the ball. (b) When the voltage is removed the EAP fingers return to their original shape and grip the ball ...age of IPMCs was that they were able to show activation (deformation) at [[voltage]]s as low as 1 or 2 [[volt]]s<ref name=ElectrochemistryEncyclopedia></ref>.
    25 KB (3,633 words) - 10:09, 20 September 2010
  • ...odify the concentration of ion species, resulting in an asymmetric current-voltage characteristic for the current flow through the pipet. ...ic current. Therefore, the ionic current becomes asymmetric if the biasing voltage is reversed.
    23 KB (3,367 words) - 10:12, 20 September 2010
  • ...e a permanent depression. Pressing firmly enough will cause a catastrophic breakdown in the sparse structure, causing it to shatter like glass—a property know ...acitors are polarity-sensitive and need to be wired in series if a working voltage of greater than about 2.75V is needed.
    26 KB (3,758 words) - 10:14, 20 September 2010
  • ...ninsulated]] [[overhead power line|overhead electric line]] in which the [[voltage]] exceeds 200 [[volt]]s; or *Causes an [[electrical breakdown|electrical discharge]] from such an electric line by coming into proximity.
    24 KB (3,474 words) - 21:31, 20 September 2010
  • ...re non-linear however. If the voltage is above 450-600V, then [[dielectric breakdown]] of the skin occurs.<ref>Reilly, p. 30</ref> ...electrical resistance|resistance]] can cause extensive and deep [[burn]]s. Voltage levels of 500 to 1000 volts tend to cause internal burns due to the large e
    20 KB (2,888 words) - 21:36, 20 September 2010
  • ...e operating state, and the low ionization potential causes the [[breakdown voltage]] of the gas to be relatively low in the cold state, which allows the lamp
    82 KB (11,842 words) - 21:02, 24 September 2010
  • ...e complementary states; one will have high voltage while the other has low voltage, (except during the brief transitions from one state to the other). ...se charges) slowly thus converting the time into an exponentially changing voltage. At the same time, the other empty capacitor quickly charges thus restoring
    18 KB (2,829 words) - 18:11, 9 December 2011
  • ...vestigation. In the worst case, assuming that the magnitude of common mode voltage and/or current is sufficient, instrument destruction is likely. ...ith respect to common mode voltage to the limit of the barrier's breakdown voltage, which is often 1,000 VDC, peak AC, or more. This action serves to protect
    10 KB (1,402 words) - 14:48, 10 December 2011
  • ...s effecting device reliability include [[gas]], [[dust]], contamination, [[voltage]], [[Electric current|current]] density, [[temperature]], [[humidity]], [[ Design factors affecting semiconductor reliability include: [[voltage]] derating, [[Electric power|power]] derating, [[Electric current|current]]
    6 KB (779 words) - 14:48, 10 December 2011
  • ...is for high output power with a corresponding drain to source [[breakdown voltage]] usually above 60 [[volt]]s, but have lower maximum power gain frequency c
    1 KB (183 words) - 14:50, 10 December 2011
  • ...and [[thyristor]]s. Based on an [[oscilloscope]], the device also contains voltage and [[current source]]s that can be used to stimulate the [[device under te ...l the maximum amount of voltage applied to the device, the polarity of the voltage applied (including the automatic application of both positive and negative
    10 KB (1,502 words) - 14:51, 10 December 2011
  • ...nder normal operating conditions—hence the name, Dielectric Withstanding Voltage test. ...f Hipot tests are commonly used. These three tests differ in the amount of voltage applied and the amount (or nature) of acceptable current flow:
    5 KB (783 words) - 14:51, 10 December 2011
  • ...generator made from a low-noise amplifier with a shorted input. Its noise voltage is determined by the shot noise of the amplifier's input transistor. ...rators. {{Harv|Motchenbacher|Fitchen|1973|pp=180&ndash;182}} There are two breakdown mechanisms: Zener and avalanche. Diodes with the corresponding effects are
    6 KB (816 words) - 14:51, 10 December 2011
  • == Voltage probes == ...on the DUT. Ideally, the test instrument and its probe will not affect the voltage being measured. Practically, that translates into the test instrument and i
    27 KB (4,130 words) - 14:52, 10 December 2011