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*Removal of the electrostatic barrier that prevents aggregation of the particles. This can be accomplished by the ...rature to accelerate destabilisation (below critical temperatures of phase inversion or chemical degradation). Temperature affects not only the viscosity, but a

...roached, leaving a gap of uninverted silicon between the end of the formed inversion layer and the drain (the ''pinch-off'' region). ...ion leads to poorer device turn off behavior known as [[DIBL|drain-induced barrier lowering]], a drain induced lowering of threshold voltage.

...termark.gif|thumb|right|500px|Atomistic simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a na ...ou can see that we're approaching the size of atoms which is a fundamental barrier, but it'll be two or three generations before we get that far—but that's